Infineon HEXFET Type N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-263 IRL540NSTRLPBF
- RS Stock No.:
- 915-5086
- Mfr. Part No.:
- IRL540NSTRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.167 14
(exc. VAT)
Kr.208 92
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 10 unit(s) ready to ship
- Plus 380 unit(s) shipping from 05. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 16,714 | Kr. 167,14 |
| 50 - 90 | Kr. 15,89 | Kr. 158,90 |
| 100 - 240 | Kr. 15,215 | Kr. 152,15 |
| 250 - 490 | Kr. 14,54 | Kr. 145,40 |
| 500 + | Kr. 13,534 | Kr. 135,34 |
*price indicative
- RS Stock No.:
- 915-5086
- Mfr. Part No.:
- IRL540NSTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Width | 11.3 mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Distrelec Product Id | 304-44-471 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Width 11.3 mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Distrelec Product Id 304-44-471 | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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