Infineon HEXFET N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-263 IRL540NSTRLPBF
- RS Stock No.:
- 915-5086
- Distrelec Article No.:
- 304-44-471
- Mfr. Part No.:
- IRL540NSTRLPBF
- Brand:
- Infineon
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Add 50 more to save Kr. 52,05
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Kr. 212,67
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Kr. 265,84
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- 10 unit(s) ready to ship
- Plus 330 unit(s) shipping from 18 November 2026
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 40 | Kr. 21,267 | Kr. 212,67 | - |
| 50 - 90 | Kr. 20,226 | Kr. 202,26 | Kr. 52,05 |
| 100 - 240 | Kr. 19,356 | Kr. 193,56 | Kr. 191,10 |
| 250 - 490 | Kr. 18,51 | Kr. 185,10 | Kr. 689,25 |
| 500 + | Kr. 17,229 | Kr. 172,29 | Kr. 2 019,00 |
*price indicative
- RS Stock No.:
- 915-5086
- Distrelec Article No.:
- 304-44-471
- Mfr. Part No.:
- IRL540NSTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 11.3mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 11.3mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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