Infineon HEXFET N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-263 IRL540NSTRLPBF
- RS Stock No.:
- 145-9569
- Mfr. Part No.:
- IRL540NSTRLPBF
- Brand:
- Infineon
Get a bulk buy discount
Add 1600 more to save Kr. 894,40
View bulk pricing optionsSubtotal (1 reel of 800 units)*
Kr. 8 933,60
(exc. VAT)
Kr. 11 167,20
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Temporarily out of stock
- Shipping from 04 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* | Saving |
|---|---|---|---|
| 800 - 800 | Kr. 11,167 | Kr. 8 933,60 | - |
| 1600 + | Kr. 10,608 | Kr. 8 486,40 | Kr. 894,40 |
*price indicative
- RS Stock No.:
- 145-9569
- Mfr. Part No.:
- IRL540NSTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 140W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Maximum Operating Temperature | 175°C | |
| Width | 11.3mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 140W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Maximum Operating Temperature 175°C | ||
Width 11.3mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRL540NSTRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 AUIRF540Z
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRL540NPBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF540ZPBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRL2910STRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRFS4010TRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IRFS4510TRLPBF