Infineon HEXFET Type N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220

RS Stock No.:: 919-4882
Mfr. Part No.:: IRL540NPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220

Bulk discount available

Subtotal (1 tube of 50 units)*

Kr.615 80

(exc. VAT)

Kr.769 75

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

350 unit(s) ready to ship
Plus 450 unit(s) shipping from 05. januar 2026

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Units	Per unit	Per Tube*
50 - 50	Kr. 12,316	Kr. 615,80
100 - 200	Kr. 9,607	Kr. 480,35
250 - 450	Kr. 8,992	Kr. 449,60
500 - 1200	Kr. 8,374	Kr. 418,70
1250 +	Kr. 7,759	Kr. 387,95

*price indicative

RS Stock No.:: 919-4882
Mfr. Part No.:: IRL540NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	44mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	140W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	74nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	4.69 mm
	Length	10.54mm
	Height	8.77mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 44mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 140W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 74nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 4.69 mm
	Length 10.54mm
	Height 8.77mm
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRL540NPBF

This MOSFET is an essential component for high-performance circuits, designed to effectively handle high current and voltage applications. It operates with a maximum drain-source voltage of 100V, making it suitable for rigorous environments in automation and electronic systems. Its strong performance and dependable operation enhance efficiency across various electrical systems.

Features & Benefits

• Continuous drain current capability of 36A for demanding applications

• Low Rds(on) of 44mΩ minimises power losses during operation

• Enhancement mode design improves switching characteristics for efficiency

• Power dissipation rating of up to 140W accommodates high-performance scenarios

• Operating temperature range from -55°C to +175°C allows versatility

• Through hole mounting facilitates easy integration into existing systems

Applications

• Power management in industrial automation systems

• Electric motor control in robotics

• DC-DC converters in renewable energy systems

• Power supplies requiring efficient switching functionality

• Consumer electronics for effective power distribution

What are the maximum voltage and current ratings?

The maximum drain-source voltage is 100V, with a continuous drain current of 36A.

How does the low Rds(on) improve performance?

A low Rds(on) of 44mΩ results in minimal power dissipation, enhancing efficiency and reducing thermal load.

What is the significance of the enhancement mode?

This mode allows for improved control over operation, enabling efficient switching and application versatility.

Can it be used in high-temperature environments?

Yes, it operates effectively at temperatures from -55°C to +175°C, suitable for extreme conditions.

How should it be mounted for optimal performance?

It is designed for through hole mounting, ensuring secure installation and connectivity in circuits.