Infineon HEXFET Type N-Channel MOSFET, 97 A, 100 V Enhancement, 3-Pin TO-263 IRFS4410ZTRLPBF
- RS Stock No.:
- 915-5058
- Mfr. Part No.:
- IRFS4410ZTRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 8 units)*
Kr.167 32
(exc. VAT)
Kr.209 152
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 392 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 8 - 32 | Kr. 20,915 | Kr. 167,32 |
| 40 - 72 | Kr. 19,863 | Kr. 158,90 |
| 80 - 192 | Kr. 19,034 | Kr. 152,27 |
| 200 - 392 | Kr. 17,76 | Kr. 142,08 |
| 400 + | Kr. 16,731 | Kr. 133,85 |
*price indicative
- RS Stock No.:
- 915-5058
- Mfr. Part No.:
- IRFS4410ZTRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 97A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 83nC | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Standards/Approvals | No | |
| Width | 11.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 97A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 83nC | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Length 10.67mm | ||
Standards/Approvals No | ||
Width 11.3 mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRFS4410ZTRLPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRFB4410ZPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220 IRF100B202
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-247AC IRFP4410ZPBF
- Infineon StrongIRFET N-Channel MOSFET 100 V, 3-Pin I2PAK IRFSL4410ZPBF
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 ISC0806NLSATMA1
- Infineon N-Channel MOSFET Transistor 100 V, 8-Pin TDSON ISC060N10NM6ATMA1
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRL540NSTRLPBF