Infineon ISC N-Channel MOSFET, 97 A, 100 V, 8-Pin TDSON ISC060N10NM6ATMA1
- RS Stock No.:
- 235-4869
- Mfr. Part No.:
- ISC060N10NM6ATMA1
- Brand:
- Infineon
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Kr. 63,95
(exc. VAT)
Kr. 79,94
(inc. VAT)
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- 4 466 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 31,975 | Kr. 63,95 |
| 20 - 48 | Kr. 28,14 | Kr. 56,28 |
| 50 - 98 | Kr. 26,20 | Kr. 52,40 |
| 100 - 198 | Kr. 24,655 | Kr. 49,31 |
| 200 + | Kr. 22,65 | Kr. 45,30 |
*price indicative
- RS Stock No.:
- 235-4869
- Mfr. Part No.:
- ISC060N10NM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 97A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.2mm | |
| Standards/Approvals | No | |
| Height | 5.35mm | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 97A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 1.2mm | ||
Standards/Approvals No | ||
Height 5.35mm | ||
Length 6.1mm | ||
Automotive Standard No | ||
Infineon ISC Series MOSFET, 100V Maximum Drain Source Voltage, 97A Maximum Continuous Drain Current - ISC060N10NM6ATMA1
This MOSFET is a surface-mount N-channel transistor designed for high-current switching and power conversion tasks in demanding environments. It operates across an extended temperature range and is intended for applications requiring significant drain current and elevated voltage capability while using a Compact package.
Features and Benefits:
• 100V maximum drain voltage enables high-voltage switching
• 97A continuous drain current supports heavy current loads
• 6mΩ maximum Rds(on) minimises conduction losses
• 125W maximum power dissipation allows sustained power handling
• 33nC typical gate charge enables predictable gate-drive sizing
• 20V maximum gate-source rating protects against overdrive events
• 97A continuous drain current supports heavy current loads
• 6mΩ maximum Rds(on) minimises conduction losses
• 125W maximum power dissipation allows sustained power handling
• 33nC typical gate charge enables predictable gate-drive sizing
• 20V maximum gate-source rating protects against overdrive events
Applications
• Suitable for high-current power converters in industrial systems
• Ideal for synchronous rectification in switching supplies
• Used with motor drivers requiring robust current capacity
• Can be used for battery management and power distribution
• Suitable for Compact surface-mount power assemblies
• Ideal for synchronous rectification in switching supplies
• Used with motor drivers requiring robust current capacity
• Can be used for battery management and power distribution
• Suitable for Compact surface-mount power assemblies
What ambient temperatures can it tolerate during operation?
It is specified to operate from -55°C up to 175°C.
How does the package influence PCB assembly and thermal routing?
The TDSON surface-mount package with eight pins facilitates automated placement and thermal connection to PCB copper for heat dissipation.
What gate-drive considerations are implied by its gate charge?
With a typical gate charge of 33nC, designers should size the driver current to achieve required switching speeds while managing switching losses.
What electrical limits must be observed to prevent device damage?
The device must not be exposed to gate-source differentials above 20V and drain-source voltages above 100V.
How does its channel type affect switching behaviour?
Being an N‑channel device, it offers low on-resistance for high-side or low-side switching where low conduction loss is required.
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