Infineon ISC Type N-Channel MOSFET, 31 A, 100 V, 8-Pin TDSON ISC230N10NM6ATMA1
- RS Stock No.:
- 235-4873
- Mfr. Part No.:
- ISC230N10NM6ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.71 76
(exc. VAT)
Kr.89 70
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 4 065 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 14,352 | Kr. 71,76 |
| 50 - 120 | Kr. 12,928 | Kr. 64,64 |
| 125 - 245 | Kr. 12,058 | Kr. 60,29 |
| 250 - 495 | Kr. 11,212 | Kr. 56,06 |
| 500 + | Kr. 9,336 | Kr. 46,68 |
*price indicative
- RS Stock No.:
- 235-4873
- Mfr. Part No.:
- ISC230N10NM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ISC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.05mΩ | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.35mm | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Width | 1.2 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ISC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.05mΩ | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.35mm | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Width 1.2 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ 6 industrial power MOSFET 100V is designed for high switching frequency application such as telecom and server power supply, but also the Ideal choice for other applications such as solar, power tools and drones. Compared to alternative products, Infineons leading thin wafer technology is enabling significant performance benefits.
Lower and softer reverse recovery charge
Ideal for high switching frequency
High avalanche energy rating
RoHS compliant
Low conduction losses
Low switching losses
Environmentally friendly
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