Infineon HEXFET Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252

View all MOSFETs

Subtotal (1 reel of 2000 units)*

Kr.13 824 00 

(exc. VAT)

Kr.17 280 00 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 10 000 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2000 +Kr. 6,912Kr. 13 824,00

*price indicative

RS Stock No.:
168-7941
Mfr. Part No.:
IRFR5410TRPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

205mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

58nC

Forward Voltage Vf

-1.6V

Maximum Power Dissipation Pd

66W

Maximum Operating Temperature

150°C

Height

2.39mm

Width

6.22 mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel Power MOSFET 100V to 150V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links