Infineon BSC040N08NS5 N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin TDSON BSC040N08NS5ATMA1

RS Stock No.:: 170-2307
Mfr. Part No.:: BSC040N08NS5ATMA1
Brand:: Infineon

Infineon BSC040N08NS5 N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin TDSON BSC040N08NS5ATMA1

Subtotal (5000 units, on reels of 5000)*

Kr. 46 805,00

(exc. VAT)

Kr. 58 505,00

(inc. VAT)

FREE delivery for online orders over 750,00 kr

Temporarily out of stock

Shipping from 29 January 2027

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Units	Per unit	Per Reel*
5000 +	Kr. 9,361	Kr. 46 805,00

*price indicative

RS Stock No.:: 170-2307
Mfr. Part No.:: BSC040N08NS5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	80V
	Series	BSC040N08NS5
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.7mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	43nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	0.88V
	Maximum Power Dissipation Pd	104W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	6.35mm
	Height	1.1mm
	Length	5.49mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 80V
	Series BSC040N08NS5
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.7mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 43nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 0.88V
	Maximum Power Dissipation Pd 104W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 6.35mm
	Height 1.1mm
	Length 5.49mm
	Automotive Standard No

Infineon BSC040N08NS5 Series MOSFET, 80V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC040N08NS5ATMA1

This MOSFET is a silicon N-channel enhancement device designed for high-current switching in surface-mount power applications. It operates across a wide industrial temperature range and is suitable for systems requiring robust conduction and fast switching. The device offers a high continuous current capability and is configured for use where compact, low-loss power handling is required.

Features and Benefits:

• 80V drain voltage enabling high-voltage switching capability
• 100A continuous drain current supporting heavy current loads
• 5.7mΩ low Rds(on) reducing conduction losses
• 104W power dissipation for elevated thermal loading
• 43nC typical gate charge enabling efficient switching transitions
• Vgs 20V maximum gate rating permitting wide gate-drive margins

Applications

• Suitable for DC-DC converters in power management systems
• Ideal for motor-drive stages in industrial controllers
• Used for synchronous rectification in power supplies
• Can be used for high-current load switching in telecoms racks
• Suitable for power-stage implementations in inverter modules

What package type does it use and why is that relevant?

It is supplied in a compact TDSON surface-mount package that facilitates low-inductance layouts and efficient board-level heat transfer.

What are the environmental operating limits for this device?

It is specified to function from -55°C up to 150°C, allowing use in a broad range of industrial temperature conditions.

How many connections does the package provide for PCB routing?

The device is presented with eight pins to support power and gate/thermal connections for robust PCB integration.

What is the channel conduction type and mode for circuit design?

It uses an N-channel enhancement-mode configuration, suitable for low-side and synchronous switching topologies.