Infineon BSC040N10NS5 N-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin TDSON BSC040N10NS5ATMA1

RS Stock No.:: 170-2309
Mfr. Part No.:: BSC040N10NS5ATMA1
Brand:: Infineon

Infineon BSC040N10NS5 N-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin TDSON BSC040N10NS5ATMA1

Subtotal (5000 units, on reels of 5000)*

Kr. 48 360,00

(exc. VAT)

Kr. 60 450,00

(inc. VAT)

FREE delivery for online orders over 750,00 kr

In Stock

10 000 unit(s) ready to ship

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Units	Per unit	Per Reel*
5000 +	Kr. 9,672	Kr. 48 360,00

*price indicative

RS Stock No.:: 170-2309
Mfr. Part No.:: BSC040N10NS5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TDSON
	Series	BSC040N10NS5
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.6mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	139W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	58nC
	Forward Voltage Vf	0.86V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Length	5.49mm
	Height	1.1mm
	Width	6.35mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 100V
	Package Type TDSON
	Series BSC040N10NS5
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.6mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 139W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 58nC
	Forward Voltage Vf 0.86V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Length 5.49mm
	Height 1.1mm
	Width 6.35mm
	Standards/Approvals No
	Automotive Standard No

Infineon BSC040N10NS5 Series MOSFET, 100A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - BSC040N10NS5ATMA1

This MOSFET is a high-current N-channel enhancement transistor designed for surface-mounted power switching in demanding electronic systems. It operates across a wide temperature range and is intended for compact board-level power stages where low conduction losses and substantial current handling are required. The device is supplied in a low-profile, leadless package suitable for automated assembly and thermal management.

Features and Benefits:

• 100A continuous drain current enables heavy load handling
• 100V drain-source rating supports high-voltage switching
• 5.6mΩ Rds(on) reduces conduction losses during operation
• 58nC typical gate charge allows controlled switching dynamics
• 139W maximum power dissipation permits significant heat throughput
• ±20V gate-source tolerance ensures robust gate-drive headroom

Applications

• Suitable for high-power DC-DC converters in industrial systems
• Ideal for motor inverter half-bridge stages on surface boards
• Used with battery management systems requiring high current
• Can be used for synchronous rectification in power supplies
• Useful in server power modules where thermal density matters

What are the thermal operating limits one should expect?

The device is specified to function between -55°C and 150°C, permitting use in both cold-start and elevated-temperature environments without derating beyond typical power-loss considerations.

How does the package affect PCB design for heat removal?

The leadless TDSON 8-pin package and 1.1mm profile allow close component placement while facilitating thermal conduction into board copper and thermal vias for improved heat dissipation.

What gate-drive considerations are recommended for reliable switching?

The maximum permissible gate-source voltage is 20V, so gate drivers should be constrained within this range and account for the 58nC typical gate charge when sizing driver current to achieve desired transition times.

How does the device behave in terms of conduction efficiency?

With a low on-resistance of 5.6mΩ and a high continuous drain current capability, it minimises I2R losses during conduction, improving overall system efficiency at substantial load currents.