Infineon BSC040N10NS5 N-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin TDSON BSC040N10NS5ATMA1
- RS Stock No.:
- 171-1973
- Mfr. Part No.:
- BSC040N10NS5ATMA1
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
Kr. 181,67
(exc. VAT)
Kr. 227,09
(inc. VAT)
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In Stock
- 10 370 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | Kr. 18,167 | Kr. 181,67 |
| 20 - 40 | Kr. 15,25 | Kr. 152,50 |
| 50 - 90 | Kr. 14,163 | Kr. 141,63 |
| 100 - 240 | Kr. 13,259 | Kr. 132,59 |
| 250 + | Kr. 12,161 | Kr. 121,61 |
*price indicative
- RS Stock No.:
- 171-1973
- Mfr. Part No.:
- BSC040N10NS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TDSON | |
| Series | BSC040N10NS5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.86V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 139W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.35mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 5.49mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TDSON | ||
Series BSC040N10NS5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.86V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 139W | ||
Maximum Operating Temperature 150°C | ||
Width 6.35mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 5.49mm | ||
Automotive Standard No | ||
Infineon BSC040N10NS5 Series MOSFET, 100A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - BSC040N10NS5ATMA1
This MOSFET is a high-current N-channel enhancement transistor designed for surface-mounted power switching in demanding electronic systems. It operates across a wide temperature range and is intended for compact board-level power stages where low conduction losses and substantial current handling are required. The device is supplied in a low-profile, leadless package suitable for automated assembly and thermal management.
Features and Benefits:
• 100A continuous drain current enables heavy load handling
• 100V drain-source rating supports high-voltage switching
• 5.6mΩ Rds(on) reduces conduction losses during operation
• 58nC typical gate charge allows controlled switching dynamics
• 139W maximum power dissipation permits significant heat throughput
• ±20V gate-source tolerance ensures robust gate-drive headroom
• 100V drain-source rating supports high-voltage switching
• 5.6mΩ Rds(on) reduces conduction losses during operation
• 58nC typical gate charge allows controlled switching dynamics
• 139W maximum power dissipation permits significant heat throughput
• ±20V gate-source tolerance ensures robust gate-drive headroom
Applications
• Suitable for high-power DC-DC converters in industrial systems
• Ideal for motor inverter half-bridge stages on surface boards
• Used with battery management systems requiring high current
• Can be used for synchronous rectification in power supplies
• Useful in server power modules where thermal density matters
• Ideal for motor inverter half-bridge stages on surface boards
• Used with battery management systems requiring high current
• Can be used for synchronous rectification in power supplies
• Useful in server power modules where thermal density matters
What are the thermal operating limits one should expect?
The device is specified to function between -55°C and 150°C, permitting use in both cold-start and elevated-temperature environments without derating beyond typical power-loss considerations.
How does the package affect PCB design for heat removal?
The leadless TDSON 8-pin package and 1.1mm profile allow close component placement while facilitating thermal conduction into board copper and thermal vias for improved heat dissipation.
What gate-drive considerations are recommended for reliable switching?
The maximum permissible gate-source voltage is 20V, so gate drivers should be constrained within this range and account for the 58nC typical gate charge when sizing driver current to achieve desired transition times.
How does the device behave in terms of conduction efficiency?
With a low on-resistance of 5.6mΩ and a high continuous drain current capability, it minimises I2R losses during conduction, improving overall system efficiency at substantial load currents.
Related links
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