Infineon BSC030N08NS5 N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin TDSON BSC030N08NS5ATMA1

RS Stock No.:: 170-2311
Mfr. Part No.:: BSC030N08NS5ATMA1
Brand:: Infineon

Infineon BSC030N08NS5 N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin TDSON BSC030N08NS5ATMA1

Subtotal (5000 units, on reels of 5000)*

Kr. 52 100,00

(exc. VAT)

Kr. 65 100,00

(inc. VAT)

FREE delivery for online orders over 750,00 kr

Temporarily out of stock

Shipping from 01 October 2027

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Units	Per unit	Per Reel*
5000 +	Kr. 10,42	Kr. 52 100,00

*price indicative

RS Stock No.:: 170-2311
Mfr. Part No.:: BSC030N08NS5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	80V
	Series	BSC030N08NS5
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	61nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.8V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	139W
	Maximum Operating Temperature	150°C
	Width	6.35mm
	Standards/Approvals	No
	Length	5.49mm
	Height	1.1mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 80V
	Series BSC030N08NS5
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 61nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.8V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 139W
	Maximum Operating Temperature 150°C
	Width 6.35mm
	Standards/Approvals No
	Length 5.49mm
	Height 1.1mm
	Automotive Standard No

Infineon BSC030N08NS5 Series MOSFET, 80V Maximum Drain Source Voltage, 100A Maximum Continuous Drain Current - BSC030N08NS5ATMA1

This n-channel enhancement MOSFET is designed for high-current switching in surface-mount power electronics. It operates across a wide temperature span and manages elevated voltages and currents, making it suitable for demanding thermal and electrical environments. The component integrates into compact board layouts and supports rapid switching for power conversion or motor-drive stages.

Features and Benefits:

• 80V drain-source rating enables higher-voltage rail operation
• 100A continuous drain current allows heavy current handling
• 3mΩ Rds(on) minimises conduction losses in load paths
• 139W power dissipation supports significant thermal throughput
• 61nC total gate charge facilitates fast switching transitions
• 20V gate-source limit permits robust gate-drive margins

Applications

• Suitable for high-current switch stages in power supplies
• Ideal for synchronous rectification in converters
• Used with motor drivers requiring fast switching
• Can be used for load-switching in telecoms power systems
• Appropriate for compact surface-mount power modules

What package type should I allow for in the PCB footprint?

The device is supplied in an eight-pin TDSON package intended for surface-mount placement, so ensure a compatible land pattern and thermal vias if needed.

How tolerant is it to extreme ambient conditions?

The component is rated to operate from -55°C up to 150°C, permitting use in applications with wide thermal variation.

What gate-drive considerations are required for efficient operation?

With a typical gate charge of 61nC and a maximum Vgs of 20V, choose a driver that can deliver sufficient peak current and stay within the gate-voltage limit to optimise switching speed.

How does its forward voltage affect low-voltage designs?

The device exhibits a forward voltage of 0.8V which influences conduction drop calculations in low-voltage, high-current systems and should be included in power-loss estimates.