Infineon Dual IRF7343PbF 1 Type P, Type N-Channel MOSFET, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

Subtotal (1 pack of 10 units)*

Kr.29 81 

(exc. VAT)

Kr.37 26 

(inc. VAT)

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Units
Per unit
Per Pack*
10 +Kr. 2,981Kr. 29,81

*price indicative

Packaging Options:
RS Stock No.:
171-1915
Mfr. Part No.:
IRF7343TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

55V

Package Type

SO-8

Series

IRF7343PbF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

170mΩ

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

0.96V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

24nC

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

4 mm

Length

5mm

Height

1.5mm

Number of Elements per Chip

1

Automotive Standard

No

Non Compliant with RoHS

The Infineon IRF7343 is the 55V dual N- and P- channel HEXFET power MOSFET in a SO-8 package.

RoHS Compliant

Low RDS(on)

Dynamic dv/dt rating

Fast switching

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