Infineon HEXFET 2 Type P, Type N-Channel MOSFET, 4.7 A, -55 V, 8-Pin SOIC

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Subtotal (1 reel of 4000 units)*

Kr.34 968 00 

(exc. VAT)

Kr.43 712 00 

(inc. VAT)

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Per Reel*
4000 +Kr. 8,742Kr. 34 968,00

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RS Stock No.:
243-9287
Mfr. Part No.:
AUIRF7343QTR
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

-55V

Package Type

SOIC

Series

HEXFET

Pin Count

8

Maximum Drain Source Resistance Rds

0.11mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Infineon AUIRF7343QTR specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Advanced Planar Technology

Ultra Low On-Resistance

Logic Level Gate Drive

Dual N and P Channel MOSFET

Surface Mount

Available in Tape & Reel

150°C Operating Temperature

Lead-Free, RoHS Compliant

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