Infineon HEXFET 2 Type P, Type N-Channel MOSFET, 4.7 A, -55 V, 8-Pin SOIC AUIRF7343QTR

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

Kr.54 32 

(exc. VAT)

Kr.67 90 

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 15 986 unit(s), ready to ship
Units
Per unit
Per Pack*
2 - 18Kr. 27,16Kr. 54,32
20 - 48Kr. 24,995Kr. 49,99
50 - 98Kr. 23,395Kr. 46,79
100 - 198Kr. 21,68Kr. 43,36
200 +Kr. 20,075Kr. 40,15

*price indicative

Packaging Options:
RS Stock No.:
243-9288
Mfr. Part No.:
AUIRF7343QTR
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

-55V

Series

HEXFET

Package Type

SOIC

Pin Count

8

Maximum Drain Source Resistance Rds

0.11mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Infineon AUIRF7343QTR specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Advanced Planar Technology

Ultra Low On-Resistance

Logic Level Gate Drive

Dual N and P Channel MOSFET

Surface Mount

Available in Tape & Reel

150°C Operating Temperature

Lead-Free, RoHS Compliant

Related links