Infineon SPA20N60C3 Type N-Channel MOSFET, 20.7 A, 600 V Enhancement, 4-Pin TO-220
- RS Stock No.:
- 171-1920
- Mfr. Part No.:
- SPA20N60C3XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.86 49
(exc. VAT)
Kr.108 112
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 10 unit(s) ready to ship
- Plus 28 unit(s) ready to ship from another location
- Plus 116 unit(s) shipping from 02. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | Kr. 43,245 | Kr. 86,49 |
| 10 - 18 | Kr. 41,125 | Kr. 82,25 |
| 20 - 48 | Kr. 37,01 | Kr. 74,02 |
| 50 - 98 | Kr. 33,29 | Kr. 66,58 |
| 100 + | Kr. 31,575 | Kr. 63,15 |
*price indicative
- RS Stock No.:
- 171-1920
- Mfr. Part No.:
- SPA20N60C3XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20.7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | SPA20N60C3 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 34.5W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.85 mm | |
| Height | 16.15mm | |
| Length | 10.65mm | |
| Standards/Approvals | No | |
| Distrelec Product Id | 304-30-528 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20.7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series SPA20N60C3 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 34.5W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.85 mm | ||
Height 16.15mm | ||
Length 10.65mm | ||
Standards/Approvals No | ||
Distrelec Product Id 304-30-528 | ||
Automotive Standard No | ||
RoHS Status: Exempted
Infineon MOSFET
The Infineon TO-220FP-3 through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 190mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 20.7A. It has a maximum gate-source voltage of 20V and drain-source voltage of 600V. It has a maximum power dissipation of 34.5W. The MOSFET has a driving voltage of 10V. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Ease of use
• Field proven CoolMOM quality
• High efficiency and power density
• High peak current capability
• High reliability
• Improved transconductance
• Lead (Pb) free
• Low gate charge (Qg)
• Low specific on state resistance
• Operating temperature ranges between -55°C and 150°C
• Outstanding cost/performance
• Periodic avalanche rated
• Ultra low gate charge
• Very low energy storage in output capacitance (Eoss) 400V
Applications
• Adapter
• PC power
• Server power supplies
• Telecommunication
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• JEDEC
Related links
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