Infineon IPB64N25S3-20 Type N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-263 IPB64N25S320ATMA1
- RS Stock No.:
- 171-1959
- Mfr. Part No.:
- IPB64N25S320ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.275 25
(exc. VAT)
Kr.344 05
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 35 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | Kr. 55,05 | Kr. 275,25 |
| 10 - 20 | Kr. 46,79 | Kr. 233,95 |
| 25 - 45 | Kr. 44,044 | Kr. 220,22 |
| 50 - 120 | Kr. 40,75 | Kr. 203,75 |
| 125 + | Kr. 37,98 | Kr. 189,90 |
*price indicative
- RS Stock No.:
- 171-1959
- Mfr. Part No.:
- IPB64N25S320ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | IPB64N25S3-20 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.25 mm | |
| Length | 10mm | |
| Height | 4.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series IPB64N25S3-20 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Width 10.25 mm | ||
Length 10mm | ||
Height 4.4mm | ||
Standards/Approvals No | ||
Automotive Standard AEC | ||
The Infineon IPB64N25S3-20 is the 250V, N-channel automotive MOSFET. The package type of the device is the D2PAK 3pin and 175°C operating temperature.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C Peak reflow
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