Toshiba Type N-Channel MOSFET, 65 A, 40 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2000 units)*

Kr.18 414 00 

(exc. VAT)

Kr.23 018 00 

(inc. VAT)

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Per Reel*
2000 +Kr. 9,207Kr. 18 414,00

*price indicative

RS Stock No.:
171-2428
Mfr. Part No.:
TK65S04N1L
Brand:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

107W

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

39nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.3mm

Length

6.5mm

Width

7 mm

Automotive Standard

AEC-Q101

RoHS Status: Exempted

COO (Country of Origin):
JP
Applications

Automotive

Motor Drivers

Switching Voltage Regulators

Features

Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ

Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)

Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA)

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