Toshiba Type N-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252

View all MOSFETs
Bulk discount available

Subtotal (1 reel of 2000 units)*

Kr.13 002 00 

(exc. VAT)

Kr.16 252 00 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 29. september 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2000 - 2000Kr. 6,501Kr. 13 002,00
4000 - 8000Kr. 6,00Kr. 12 000,00
10000 +Kr. 5,571Kr. 11 142,00

*price indicative

RS Stock No.:
171-2429
Mfr. Part No.:
TK8S06K3L
Brand:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

10nC

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

25W

Maximum Operating Temperature

175°C

Length

6.5mm

Width

7 mm

Height

2.3mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

RoHS Status: Exempted

COO (Country of Origin):
JP
Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)

Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA

Related links