Toshiba Type N-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252 TK8S06K3L

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Subtotal (1 pack of 10 units)*

Kr.105 59 

(exc. VAT)

Kr.131 99 

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40Kr. 10,559Kr. 105,59
50 - 90Kr. 9,049Kr. 90,49
100 - 990Kr. 7,905Kr. 79,05
1000 +Kr. 7,024Kr. 70,24

*price indicative

Packaging Options:
RS Stock No.:
171-2501
Mfr. Part No.:
TK8S06K3L
Brand:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10nC

Maximum Power Dissipation Pd

25W

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

7 mm

Length

6.5mm

Height

2.3mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

RoHS Status: Exempted

COO (Country of Origin):
JP
Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)

Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA

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