Toshiba Type N-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252 TK8S06K3L
- RS Stock No.:
- 171-2501
- Mfr. Part No.:
- TK8S06K3L
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.84 47
(exc. VAT)
Kr.105 59
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 10 unit(s) ready to ship
- Plus 1 360 unit(s) shipping from 16. februar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 8,447 | Kr. 84,47 |
| 50 - 90 | Kr. 7,239 | Kr. 72,39 |
| 100 - 990 | Kr. 6,327 | Kr. 63,27 |
| 1000 + | Kr. 5,617 | Kr. 56,17 |
*price indicative
- RS Stock No.:
- 171-2501
- Mfr. Part No.:
- TK8S06K3L
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 25W | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Width | 7 mm | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 25W | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Width 7 mm | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempted
- COO (Country of Origin):
- JP
Automotive
Motor Drivers
DC-DC Converters
Switching Voltage Regulators
Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)
Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA
Related links
- Toshiba Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Toshiba Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Toshiba Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 TK60S06K3L
- Toshiba Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Toshiba Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Toshiba Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 TJ8S06M3L
- Toshiba Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 T2N7002BK
- Toshiba Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252