Toshiba Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-252

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Subtotal (1 reel of 2000 units)*

Kr.20 836 00 

(exc. VAT)

Kr.26 044 00 

(inc. VAT)

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  • 2 000 unit(s) ready to ship
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Units
Per unit
Per Reel*
2000 - 2000Kr. 10,418Kr. 20 836,00
4000 - 8000Kr. 9,616Kr. 19 232,00
10000 +Kr. 8,928Kr. 17 856,00

*price indicative

RS Stock No.:
171-2426
Mfr. Part No.:
TK60S06K3L
Brand:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

88W

Typical Gate Charge Qg @ Vgs

60nC

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.5mm

Height

2.3mm

Width

7 mm

Automotive Standard

AEC-Q101

RoHS Status: Exempted

COO (Country of Origin):
JP
Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 60 V)

Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)

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