N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN Toshiba TK31V60W5

RS Stock No.:: 171-2526
Mfr. Part No.:: TK31V60W5
Brand:: Toshiba

N-Channel MOSFET, 30.8 A, 600 V, 5-Pin DFN Toshiba TK31V60W5

Available to back order for despatch 24.10.2024

Added

Price Each (In a Pack of 2)

Kr. 59,885

(exc. VAT)

Kr. 74,856

(inc. VAT)

Units	Per unit	Per Pack*
2 - 8	Kr. 59,885	Kr. 119,77
10 - 98	Kr. 53,83	Kr. 107,66
100 - 498	Kr. 48,995	Kr. 97,99
500 - 998	Kr. 44,94	Kr. 89,88
1000 +	Kr. 41,385	Kr. 82,77
*price indicative

RS Stock No.:: 171-2526
Mfr. Part No.:: TK31V60W5
Brand:: Toshiba

Technical Reference

Legislation and Compliance

RoHS Status: Exempted

COO (Country of Origin):: CN

Product Details

Switching Voltage Regulators
Fast reverse recovery time: trr = 135 ns (typ.)
Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.)
Easy to control Gate switching
Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA)

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30.8 A
Maximum Drain Source Voltage	600 V
Package Type	DFN
Mounting Type	Surface Mount
Pin Count	5
Maximum Drain Source Resistance	109 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	240 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Number of Elements per Chip	1
Width	8mm
Maximum Operating Temperature	+150 °C
Length	8mm
Typical Gate Charge @ Vgs	105 nC @ 10 V
Height	0.85mm
Forward Diode Voltage	1.7V

RS Stock No.:: 171-2526
Mfr. Part No.:: TK31V60W5
Brand:: Toshiba