onsemi Dual NVMFD5C680NL 2 Type N-Channel MOSFET, 26 A, 60 V Enhancement, 8-Pin DFN NVMFD5C680NLT1G
- RS Stock No.:
- 172-3375
- Mfr. Part No.:
- NVMFD5C680NLT1G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr.348 575
(exc. VAT)
Kr.435 725
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 1 500 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | Kr. 13,943 | Kr. 348,58 |
| 100 - 225 | Kr. 12,021 | Kr. 300,53 |
| 250 + | Kr. 10,424 | Kr. 260,60 |
*price indicative
- RS Stock No.:
- 172-3375
- Mfr. Part No.:
- NVMFD5C680NLT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVMFD5C680NL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 5nC | |
| Maximum Power Dissipation Pd | 19W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Width | 5.1 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVMFD5C680NL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 5nC | ||
Maximum Power Dissipation Pd 19W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Width 5.1 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
Related links
- onsemi NVMFD5C680NL Dual N-Channel MOSFET 60 V, 8-Pin DFN NVMFD5C680NLT1G
- onsemi NVMFD5C680NL Dual N-Channel MOSFET 60 V, 8-Pin DFN NVMFD5C680NLWFT1G
- onsemi NVMFD5C650NL Dual N-Channel MOSFET 60 V, 8-Pin DFN NVMFD5C650NLWFT1G
- onsemi Dual N-Channel MOSFET 60 V, 8-Pin DFN NVMFD5C668NLT1G
- onsemi NVMFD5C672NL Dual N-Channel MOSFET 60 V, 8-Pin DFN NVMFD5C672NLWFT1G
- onsemi NVMFD5C672NL Dual N-Channel MOSFET 60 V, 8-Pin DFN NVMFD5C672NLT1G
- onsemi NVMFD5C674NL Dual N-Channel MOSFET 60 V, 8-Pin DFN NVMFD5C674NLT1G
- onsemi Dual N-Channel MOSFET 60 V, 8-Pin DFN NTMFD5C674NLT1G