ROHM RD3T100CN N-Channel MOSFET, 10 A, 200 V, 3-Pin DPAK RD3T100CNTL1
- RS Stock No.:
- 177-6805
- Mfr. Part No.:
- RD3T100CNTL1
- Brand:
- ROHM
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 177-6805
- Mfr. Part No.:
- RD3T100CNTL1
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-252 | |
| Series | RD3T100CN | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 182 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.25V | |
| Minimum Gate Threshold Voltage | 3.25V | |
| Maximum Power Dissipation | 85 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Number of Elements per Chip | 1 | |
| Width | 6.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V | |
| Length | 6.8mm | |
| Height | 2.4mm | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-252 | ||
Series RD3T100CN | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 182 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.25V | ||
Minimum Gate Threshold Voltage 3.25V | ||
Maximum Power Dissipation 85 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Number of Elements per Chip 1 | ||
Width 6.4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 25 nC @ 10 V | ||
Length 6.8mm | ||
Height 2.4mm | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Not Applicable
- COO (Country of Origin):
- TH
RD3T100CN is a power MOSFET with low on-resistance and fast switching, suitable for the switching application
Low on-resistance
Fast switching speed
Drive circuits can be simple
Parallel use is easy
Pb-free plating
Fast switching speed
Drive circuits can be simple
Parallel use is easy
Pb-free plating
Related links
- ROHM N-Channel MOSFET 100 V, 3-Pin DPAK RD3P100SNTL1
- ROHM R60 N-Channel MOSFET 600 V, 3-Pin DPAK R6010YND3TL1
- onsemi UniFET N-Channel MOSFET 200 V, 3-Pin DPAK FDD18N20LZ
- onsemi QFET N-Channel MOSFET 200 V, 3-Pin DPAK FQD12N20LTM
- Vishay N-Channel MOSFET 200 V, 3-Pin DPAK IRFR210TRPBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin DPAK IRFR4620PBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin DPAK AUIRFR4620TRL
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin DPAK IRFR220NTRLPBF
