Infineon OptiMOS N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK IPD30N06S2L23ATMA1

RS Stock No.:: 826-9115
Mfr. Part No.:: IPD30N06S2L23ATMA1
Brand:: Infineon

Infineon OptiMOS N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK IPD30N06S2L23ATMA1

Bulk discount available

Subtotal (1 pack of 25 units)*

Kr.281 025

(exc. VAT)

Kr.351 275

(inc. VAT)

Stock information currently inaccessible

Units	Per unit	Per Pack*
25 - 100	Kr. 11,241	Kr. 281,03
125 - 225	Kr. 10,336	Kr. 258,40
250 - 600	Kr. 9,723	Kr. 243,08
625 - 1225	Kr. 8,945	Kr. 223,63
1250 +	Kr. 8,24	Kr. 206,00

*price indicative

RS Stock No.:: 826-9115
Mfr. Part No.:: IPD30N06S2L23ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	30 A
	Maximum Drain Source Voltage	55 V
	Package Type	DPAK (TO-252)
	Series	OptiMOS
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	30 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	100 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Width	6.22mm
	Maximum Operating Temperature	+175 °C
	Length	6.5mm
	Typical Gate Charge @ Vgs	33 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Height	2.3mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 30 A
	Maximum Drain Source Voltage 55 V
	Package Type DPAK (TO-252)
	Series OptiMOS
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 30 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 100 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Number of Elements per Chip 1
	Width 6.22mm
	Maximum Operating Temperature +175 °C
	Length 6.5mm
	Typical Gate Charge @ Vgs 33 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Height 2.3mm

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK IPD30N06S2L23ATMA1

Infineon OptiMOS™ Power MOSFET Family

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