Vishay IRF840A Type N-Channel MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220 IRF840APBF
- RS Stock No.:
- 178-0835
- Mfr. Part No.:
- IRF840APBF
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr.659 65
(exc. VAT)
Kr.824 55
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 50 unit(s) shipping from 29. desember 2025
- Plus 200 unit(s) shipping from 29. desember 2025
- Plus 5 650 unit(s) shipping from 05. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 13,193 | Kr. 659,65 |
| 100 - 200 | Kr. 11,213 | Kr. 560,65 |
| 250 + | Kr. 10,555 | Kr. 527,75 |
*price indicative
- RS Stock No.:
- 178-0835
- Mfr. Part No.:
- IRF840APBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IRF840A | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7 mm | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IRF840A | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Width 4.7 mm | ||
Length 10.41mm | ||
Height 9.01mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.
Operating junction and storage temperature range - 55 to + 150°C
Related links
- Vishay N-Channel MOSFET 500 V, 3-Pin TO-220AB IRF840APBF
- Vishay N-Channel MOSFET 500 V, 3-Pin TO-220AB IRF840PBF
- Vishay N-Channel MOSFET 500 V, 3-Pin TO-220AB IRF840LCPBF
- Vishay Dual Silicon N-Channel MOSFET 500 V, 3-Pin TO-220AB IRF840HPBF
- Vishay N-Channel MOSFET 500 V, 3-Pin D2PAK IRF840ASPBF
- Vishay N-Channel MOSFET 500 V, 3-Pin D2PAK IRF840SPBF
- Vishay N-Channel MOSFET 500 V, 3-Pin TO-220AB IRFB13N50APBF
- Vishay N-Channel MOSFET 500 V, 3-Pin TO-220AB IRF820APBF