Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 60 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

Kr.13 107 00 

(exc. VAT)

Kr.16 383 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 4,369Kr. 13 107,00

*price indicative

RS Stock No.:
178-3727
Mfr. Part No.:
SQS966ENW-T1_GE3
Brand:
Vishay Siliconix
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Brand

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12.1nC

Forward Voltage Vf

0.82V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

27.8W

Minimum Operating Temperature

-55°C

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Height

1.07mm

Width

3.15 mm

Standards/Approvals

No

Length

3.15mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

RoHS Status: Exempted

COO (Country of Origin):
CN
TrenchFET® power MOSFET

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