Vishay Dual N Channel Mosfet TrenchFET 2 Type N-Channel MOSFET, 13.1 A, 100 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 pack of 5 units)*

Kr.97 58 

(exc. VAT)

Kr.121 975 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45Kr. 19,516Kr. 97,58
50 - 120Kr. 18,556Kr. 92,78
125 - 245Kr. 15,628Kr. 78,14
250 - 495Kr. 14,666Kr. 73,33
500 +Kr. 13,636Kr. 68,18

*price indicative

Packaging Options:
RS Stock No.:
228-2827
Mfr. Part No.:
Si7252ADP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13.1A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

18.6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

100V

Typical Gate Charge Qg @ Vgs

13.1nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Dual N Channel Mosfet

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.

PWM optimized

100 % Rg and UIS tested

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