Vishay Dual N Channel Mosfet TrenchFET 2 Type N-Channel MOSFET, 13.1 A, 100 V Enhancement, 8-Pin PowerPAK 1212

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Subtotal (1 reel of 3000 units)*

Kr.23 883 00 

(exc. VAT)

Kr.29 853 00 

(inc. VAT)

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  • 15 000 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Reel*
3000 +Kr. 7,961Kr. 23 883,00

*price indicative

RS Stock No.:
228-2826
Mfr. Part No.:
Si7252ADP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13.1A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

18.6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

100V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

13.1nC

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Dual N Channel Mosfet

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.

PWM optimized

100 % Rg and UIS tested

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