onsemi NDT451AN Type N-Channel MOSFET, 7.2 A, 30 V Enhancement, 4-Pin SOT-223

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Subtotal (1 reel of 4000 units)*

Kr.19 740 00 

(exc. VAT)

Kr.24 676 00 

(inc. VAT)

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Units
Per unit
Per Reel*
4000 +Kr. 4,935Kr. 19 740,00

*price indicative

RS Stock No.:
178-7632
Mfr. Part No.:
NDT451AN
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7.2A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-223

Series

NDT451AN

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19nC

Minimum Operating Temperature

-65°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

3W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.7 mm

Length

6.7mm

Height

1.7mm

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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