Vishay TrenchFET Type N-Channel MOSFET, 3.5 A, 8 V Enhancement, 4-Pin MICRO FOOT

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Subtotal (1 reel of 3000 units)*

Kr.5 217 00 

(exc. VAT)

Kr.6 522 00 

(inc. VAT)

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Units
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Per Reel*
3000 +Kr. 1,739Kr. 5 217,00

*price indicative

RS Stock No.:
180-7328
Mfr. Part No.:
SI8802DB-T2-E1
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.5A

Maximum Drain Source Voltage Vds

8V

Series

TrenchFET

Package Type

MICRO FOOT

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

54mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

0.6W

Typical Gate Charge Qg @ Vgs

4.3nC

Maximum Gate Source Voltage Vgs

5 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

0.8 mm

Standards/Approvals

No

Length

0.8mm

Automotive Standard

No

The Vishay Siliconix SI8802DB series TrenchFET N channel power MOSFET has drain to source voltage of 8 V. It is maximum power dissipation of 0.9 W and mainly used in Load switch with low voltage drop.

Low on-resistance

Halogen free

Pb free

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