Vishay Si8489EDB Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 4-Pin MICRO FOOT SI8489EDB-T2-E1
- RS Stock No.:
- 818-1438
- Mfr. Part No.:
- SI8489EDB-T2-E1
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)*
Kr.60 76
(exc. VAT)
Kr.75 96
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 28. april 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | Kr. 3,038 | Kr. 60,76 |
| 200 - 980 | Kr. 2,855 | Kr. 57,10 |
| 1000 - 1980 | Kr. 2,586 | Kr. 51,72 |
| 2000 - 4980 | Kr. 2,431 | Kr. 48,62 |
| 5000 + | Kr. 2,277 | Kr. 45,54 |
*price indicative
- RS Stock No.:
- 818-1438
- Mfr. Part No.:
- SI8489EDB-T2-E1
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | Si8489EDB | |
| Package Type | MICRO FOOT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 82mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17.5nC | |
| Forward Voltage Vf | -0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Operating Temperature | 150°C | |
| Length | 1mm | |
| Standards/Approvals | No | |
| Height | 0.268mm | |
| Width | 1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series Si8489EDB | ||
Package Type MICRO FOOT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 82mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17.5nC | ||
Forward Voltage Vf -0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Operating Temperature 150°C | ||
Length 1mm | ||
Standards/Approvals No | ||
Height 0.268mm | ||
Width 1 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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