Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 0.5 A, 20 V Enhancement, 6-Pin SC-89 SI1034CX-T1-GE3

RS Stock No.:: 180-7879
Mfr. Part No.:: SI1034CX-T1-GE3
Brand:: Vishay

Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 0.5 A, 20 V Enhancement, 6-Pin SC-89 SI1034CX-T1-GE3

Subtotal (1 pack of 50 units)*

Kr.99 40

(exc. VAT)

Kr.124 25

(inc. VAT)

FREE delivery for online orders over 500,00 kr

Temporarily out of stock

8 900 unit(s) shipping from 29. desember 2025

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Units	Per unit	Per Pack*
50 +	Kr. 1,988	Kr. 99,40

*price indicative

RS Stock No.:: 180-7879
Mfr. Part No.:: SI1034CX-T1-GE3
Brand:: Vishay

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	0.5A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SC-89
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.396Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	8 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	220mW
	Typical Gate Charge Qg @ Vgs	1.3nC
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Length	1.7mm
	Width	1.2 mm
	Height	0.6mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 0.5A
	Maximum Drain Source Voltage Vds 20V
	Package Type SC-89
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.396Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 8 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 220mW
	Typical Gate Charge Qg @ Vgs 1.3nC
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Length 1.7mm
	Width 1.2 mm
	Height 0.6mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet

Vishay MOSFET

The Vishay surface mount dual N-channel MOSFET has a drain-source voltage of 20V. It has drain-source resistance of 396mohm at a gate-source voltage of 4.5V. It has a maximum power rating of 220mW. The MOSFET has continuous drain current of 610mA. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Gate source ESD protected: 1000V

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Battery powered devices

• Drivers: relays, solenoids, lamps, hammers, displays, memories

• Load/power switching for portable devices

• Power supply converter circuits

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested