Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 4.5 A, 20 V Enhancement, 8-Pin SC-70 SIA938DJT-T1-GE3

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Subtotal (1 pack of 25 units)*

Kr.166 575 

(exc. VAT)

Kr.208 225 

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 225Kr. 6,663Kr. 166,58
250 - 600Kr. 6,324Kr. 158,10
625 - 1225Kr. 5,326Kr. 133,15
1250 - 2475Kr. 4,997Kr. 124,93
2500 +Kr. 4,663Kr. 116,58

*price indicative

Packaging Options:
RS Stock No.:
228-2835
Mfr. Part No.:
SIA938DJT-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

20V

Package Type

SC-70

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

21.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

7.8W

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.5nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Dual N-Channel MOSFET provides exceptional versatility for power management design.

Very low RDS(on) and excellent RDS x Qg

Figure-of-Merit (FOM) in an ultra compact

package footprint

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