Vishay Single E Type N-Channel MOSFET, 21 A, 600 V TO-220 SIHA22N60E-E3
- RS Stock No.:
- 180-7900
- Mfr. Part No.:
- SIHA22N60E-E3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.107 99
(exc. VAT)
Kr.134 988
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 11. mai 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 53,995 | Kr. 107,99 |
| 20 - 48 | Kr. 48,735 | Kr. 97,47 |
| 50 - 98 | Kr. 46,56 | Kr. 93,12 |
| 100 - 198 | Kr. 44,33 | Kr. 88,66 |
| 200 + | Kr. 37,865 | Kr. 75,73 |
*price indicative
- RS Stock No.:
- 180-7900
- Mfr. Part No.:
- SIHA22N60E-E3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | TO-220 | |
| Maximum Drain Source Resistance Rds | 0.18Ω | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 13.8mm | |
| Width | 10.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type TO-220 | ||
Maximum Drain Source Resistance Rds 0.18Ω | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 13.8mm | ||
Width 10.3 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay SIHA22N60E is a E series N-channel power MOSFET having drain to source(Vds) voltage of 600V.The gate to source voltage(VGS) is 30V. It is having Thin-Lead TO-220 FULLPAK package. It offers drain to source resistance (RDS.) 0.18ohms at 10VGS. Maximum drain current 8A.
Low figure of merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
Related links
- Vishay Single E Type N-Channel MOSFET 600 V TO-220
- Vishay Single E Type N-Channel MOSFET 650 V TO-247AC
- Vishay Single E Type N-Channel MOSFET 650 V TO-247AC SIHG47N65E-GE3
- Vishay Single E 1 Type N-Channel Power MOSFET 500 V, 3-Pin TO-220AB
- Vishay Single EF 1 Type N-Channel Power MOSFET 600 V, 3-Pin TO-220AB
- Vishay Single EF 1 Type N-Channel Power MOSFET 600 V, 3-Pin TO-220AB SIHP21N60EF-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-247 SIHG24N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-247