Vishay TrenchFET Type P-Channel MOSFET, 0.52 A, 150 V Enhancement, 6-Pin SOT-363 SI1411DH-T1-GE3

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Subtotal (1 pack of 20 units)*

Kr.94 72 

(exc. VAT)

Kr.118 40 

(inc. VAT)

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Units
Per unit
Per Pack*
20 - 180Kr. 4,736Kr. 94,72
200 - 480Kr. 4,502Kr. 90,04
500 - 980Kr. 4,027Kr. 80,54
1000 - 1980Kr. 2,889Kr. 57,78
2000 +Kr. 2,345Kr. 46,90

*price indicative

Packaging Options:
RS Stock No.:
180-7915
Mfr. Part No.:
SI1411DH-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

0.52A

Maximum Drain Source Voltage Vds

150V

Series

TrenchFET

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

2.6Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1W

Forward Voltage Vf

-1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.2nC

Maximum Operating Temperature

150°C

Length

2.2mm

Width

2.4 mm

Height

1.1mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay Siliconix SI1411DH series TrenchFET P channel power MOSFET has drain to source voltage of 150 V. It is used in active clamp circuits in DC/DC power supplies.

Small, thermally enhanced SC-70 package

Ultra low on-resistance

Pb-free

Halogen free

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