Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA449DJ-T1-GE3

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Subtotal (1 pack of 20 units)*

Kr.89 80 

(exc. VAT)

Kr.112 20 

(inc. VAT)

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Last RS stock
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Units
Per unit
Per Pack*
20 - 180Kr. 4,49Kr. 89,80
200 - 480Kr. 3,318Kr. 66,36
500 - 980Kr. 2,78Kr. 55,60
1000 - 1980Kr. 2,471Kr. 49,42
2000 +Kr. 1,796Kr. 35,92

*price indicative

Packaging Options:
RS Stock No.:
814-1213
Mfr. Part No.:
SIA449DJ-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-363

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.038Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-0.8V

Maximum Power Dissipation Pd

19W

Typical Gate Charge Qg @ Vgs

23.1nC

Maximum Operating Temperature

150°C

Length

2.15mm

Standards/Approvals

RoHS

Width

2.15 mm

Height

0.8mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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