onsemi FDP Type N-Channel MOSFET, 128 A, 100 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 181-1859
- Mfr. Part No.:
- FDP4D5N10C
- Brand:
- onsemi
Subtotal (1 tube of 800 units)*
Kr.25 338 40
(exc. VAT)
Kr.31 672 80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 08. juni 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 800 + | Kr. 31,673 | Kr. 25 338,40 |
*price indicative
- RS Stock No.:
- 181-1859
- Mfr. Part No.:
- FDP4D5N10C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 128A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | FDP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.67 mm | |
| Height | 15.21mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 128A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series FDP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.67 mm | ||
Height 15.21mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Max RDS(on) = 4.5 mΩ at VGS = 10 V, ID = 128 A
Power Density & Shielded Gate Power Density & Shielded Gate High efficiency / High performance
High Performance Trench Technology for Extremely Low RDS(on)
High power density with Shielded gate technology
Extremely Low Reverse Recovery Charge, Qrr
Low Vds spike internal snubber function.
Low Gate Charge, QG = 48nC (Typ.)
Low switching loss
High Power and Current Handling Capability
Low Qrr/Trr
Soft recovery performance
Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
Server
Telecom
Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)
Motor Drive
Uninterruptible Power Supplies
Solar Inverter
Related links
- onsemi N-Channel MOSFET 100 V, 3-Pin TO-220 FDP4D5N10C
- onsemi N-Channel MOSFET 100 V, 3-Pin TO-220F FDPF4D5N10C
- onsemi N-Channel MOSFET 100 V, 3-Pin TO-220 FDP2D3N10C
- onsemi N-Channel MOSFET 100 V, 3-Pin TO-220 NTP6410ANG
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin D2PAK IRFS3307ZTRLPBF
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin D2PAK IRFS3307ZTRRPBF
- onsemi PowerTrench N-Channel MOSFET 100 V, 3-Pin TO-220 FDP150N10A_F102
- onsemi PowerTrench N-Channel MOSFET 100 V, 3-Pin TO-220 FDP090N10