onsemi FDP Type N-Channel MOSFET, 128 A, 100 V Enhancement, 3-Pin TO-220 FDP4D5N10C

RS Stock No.:: 181-1903
Mfr. Part No.:: FDP4D5N10C
Brand:: onsemi

onsemi FDP Type N-Channel MOSFET, 128 A, 100 V Enhancement, 3-Pin TO-220 FDP4D5N10C

Bulk discount available

Subtotal (1 pack of 2 units)*

Kr.97 93

(exc. VAT)

Kr.122 412

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

2 unit(s) ready to ship
Plus 170 unit(s) shipping from 02. januar 2026

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Units	Per unit	Per Pack*
2 - 18	Kr. 48,965	Kr. 97,93
20 - 198	Kr. 42,215	Kr. 84,43
200 +	Kr. 36,61	Kr. 73,22

*price indicative

RS Stock No.:: 181-1903
Mfr. Part No.:: FDP4D5N10C
Brand:: onsemi

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	128A
	Maximum Drain Source Voltage Vds	100V
	Series	FDP
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	48nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	150W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	4.67 mm
	Height	15.21mm
	Length	10.36mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 128A
	Maximum Drain Source Voltage Vds 100V
	Series FDP
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 48nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 150W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 4.67 mm
	Height 15.21mm
	Length 10.36mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Max RDS(on) = 4.5 mΩ at VGS = 10 V, ID = 128 A

Power Density & Shielded Gate Power Density & Shielded Gate High efficiency / High performance

High Performance Trench Technology for Extremely Low RDS(on)

High power density with Shielded gate technology

Extremely Low Reverse Recovery Charge, Qrr

Low Vds spike internal snubber function.

Low Gate Charge, QG = 48nC (Typ.)

Low switching loss

High Power and Current Handling Capability

Low Qrr/Trr

Soft recovery performance

Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.

Motor drives and Uninterruptible Power Supplies

Micro Solar Inverter

Server

Telecom

Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)

Motor Drive

Uninterruptible Power Supplies

Solar Inverter

onsemi FDP Type N-Channel MOSFET, 128 A, 100 V Enhancement, 3-Pin TO-220 FDP4D5N10C

FREE delivery for online orders over 500,00 kr

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