Toshiba P-Channel MOSFET, 6 A, 30 V, 3-Pin SOT-23F SSM3J332R
- RS Stock No.:
- 182-5521
- Mfr. Part No.:
- SSM3J332R
- Brand:
- Toshiba
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 182-5521
- Mfr. Part No.:
- SSM3J332R
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-23F | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 144 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.2V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±12 V | |
| Width | 1.8mm | |
| Typical Gate Charge @ Vgs | 8.2 nC @ 4.5 V | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 0.8mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type P | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23F | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 144 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±12 V | ||
Width 1.8mm | ||
Typical Gate Charge @ Vgs 8.2 nC @ 4.5 V | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.2V | ||
Height 0.8mm | ||
- COO (Country of Origin):
- TH
Toshiba offers an extensive portfolio of low-VDSS and mid/high-VDSS MOSFETs in various circuit configurations and packages, featuring high speed, high performance, low loss, low on-resistance, small packaging, etc.Toshiba has decades of experience in the development and manufacturing of MOSFETs. Its main products include the mid- to high-voltage DTMOS IV Series with a VDSS of 500V to 800V and the low-voltage UMOS Series with a VDSS of 12V to 250V.
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