onsemi NVMYS1D3N04C Type N-Channel MOSFET, 252 A, 40 V Enhancement, 4-Pin LFPAK NVMYS1D3N04CTWG

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Subtotal (1 pack of 4 units)*

Kr.81 732 

(exc. VAT)

Kr.102 164 

(inc. VAT)

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4 +Kr. 20,433Kr. 81,73

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Packaging Options:
RS Stock No.:
185-9246
Mfr. Part No.:
NVMYS1D3N04CTWG
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

252A

Maximum Drain Source Voltage Vds

40V

Series

NVMYS1D3N04C

Package Type

LFPAK

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

75nC

Maximum Power Dissipation Pd

134W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

5mm

Width

4.25 mm

Height

1.2mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Non Compliant with RoHS

COO (Country of Origin):
PH
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

Small Footprint (5x6 mm) for Compact Design

Low RDS(on) to Minimize Conduction Losses

Low QG and Capacitance to Minimize Driver Losses

LFPAK4 Package, Industry Standard

PPAP Capable

These Devices are Pb−Free

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