Vishay SiHB22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-263

Bulk discount available

Subtotal (1 tube of 50 units)*

Kr.895 05 

(exc. VAT)

Kr.1 118 80 

(inc. VAT)

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  • Plus 1 000 unit(s) shipping from 26. desember 2025
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Units
Per unit
Per Tube*
50 - 50Kr. 17,901Kr. 895,05
100 - 200Kr. 15,395Kr. 769,75
250 +Kr. 14,482Kr. 724,10

*price indicative

RS Stock No.:
188-4872
Mfr. Part No.:
SIHB22N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

SiHB22N60EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

182mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48nC

Maximum Power Dissipation Pd

179W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

4.57mm

Width

9.65 mm

Length

10.41mm

Automotive Standard

No

EF Series Power MOSFET With Fast Body Diode.

Low figure-of-merit (FOM) Ron x Qg

Low input capacitance (Ciss)

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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