Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

Kr.19 302 00 

(exc. VAT)

Kr.24 126 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 6,434Kr. 19 302,00

*price indicative

RS Stock No.:
188-4915
Mfr. Part No.:
SQJ208EP-T1_GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

40V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

16mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

48W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.77V

Typical Gate Charge Qg @ Vgs

22nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Standards/Approvals

No

Length

5mm

Width

4.47 mm

Height

1.01mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs.

TrenchFET® power MOSFET

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