STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 192-4661
- Mfr. Part No.:
- STP26N60DM6
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 50 units)*
Kr.1 544 40
(exc. VAT)
Kr.1 930 50
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 50 unit(s) shipping from 05. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | Kr. 30,888 | Kr. 1 544,40 |
| 100 - 200 | Kr. 30,053 | Kr. 1 502,65 |
| 250 - 450 | Kr. 29,252 | Kr. 1 462,60 |
| 500 - 950 | Kr. 28,511 | Kr. 1 425,55 |
| 1000 + | Kr. 27,799 | Kr. 1 389,95 |
*price indicative
- RS Stock No.:
- 192-4661
- Mfr. Part No.:
- STP26N60DM6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 195mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 110W | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Height | 15.75mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 195mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 110W | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Operating Temperature 150°C | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Height 15.75mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
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