onsemi NVMYS025N06CL Type N-Channel MOSFET, 21 A, 60 V Enhancement, 4-Pin LFPAK NVMYS025N06CLTWG
- RS Stock No.:
- 195-2552
- Mfr. Part No.:
- NVMYS025N06CLTWG
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 50 units)*
Kr.417 90
(exc. VAT)
Kr.522 40
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 25. mai 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 450 | Kr. 8,358 | Kr. 417,90 |
| 500 - 950 | Kr. 7,205 | Kr. 360,25 |
| 1000 + | Kr. 6,246 | Kr. 312,30 |
*price indicative
- RS Stock No.:
- 195-2552
- Mfr. Part No.:
- NVMYS025N06CLTWG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Series | NVMYS025N06CL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 43mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 24W | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.15mm | |
| Width | 4.25 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Series NVMYS025N06CL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 43mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 24W | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.15mm | ||
Width 4.25 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
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