STMicroelectronics SCTH35 SiC N-Channel MOSFET, 45 A, 650 V, 7-Pin H2PAK-7 SCTH35N65G2V-7
- RS Stock No.:
- 201-0891
- Mfr. Part No.:
- SCTH35N65G2V-7
- Brand:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 201-0891
- Mfr. Part No.:
- SCTH35N65G2V-7
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 45 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | SCTH35 | |
| Package Type | H2PAK-7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 0.055 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.2V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 45 A | ||
Maximum Drain Source Voltage 650 V | ||
Series SCTH35 | ||
Package Type H2PAK-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 0.055 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.2V | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 55m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Low capacitance
Low capacitance
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