Infineon CoolSiC Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1
- RS Stock No.:
- 201-2810
- Mfr. Part No.:
- FF6MR12W2M1B11BOMA1
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 201-2810
- Mfr. Part No.:
- FF6MR12W2M1B11BOMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Series | CoolSiC | |
| Package Type | AG-EASY2B | |
| Mounting Type | Screw Mount | |
| Maximum Drain Source Resistance | 0.00825 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.55V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 2 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series CoolSiC | ||
Package Type AG-EASY2B | ||
Mounting Type Screw Mount | ||
Maximum Drain Source Resistance 0.00825 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.55V | ||
Transistor Material SiC | ||
Number of Elements per Chip 2 | ||
The Infineon 6 mO, 1200 V half bridge module with Silicon Carbide MOSFET, It has NTC temperature sensor and PressFIT contact technology. It is also available with thermal interface material.
High current density
Low inductive design
Low switching losses
RoHS-compliant modules
Low inductive design
Low switching losses
RoHS-compliant modules
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