onsemi NVB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.140 794 40 

(exc. VAT)

Kr.175 992 80 

(inc. VAT)

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Units
Per unit
Per Reel*
800 +Kr. 175,993Kr. 140 794,40

*price indicative

RS Stock No.:
202-5730
Mfr. Part No.:
NVBG040N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

1200V

Series

NVB

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

56mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

106nC

Maximum Power Dissipation Pd

178W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

4.7 mm

Standards/Approvals

AEC-Q101

Height

15.7mm

Length

10.2mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified

Production part approval process Capable

100% avalanche tested

Low effective output capacitance

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