onsemi NVB N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 7-Pin TO-263 NVBG040N120SC1
- RS Stock No.:
- 202-5731
- Mfr. Part No.:
- NVBG040N120SC1
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
Kr. 550,38
(exc. VAT)
Kr. 687,98
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 275,19 | Kr. 550,38 |
| 20 - 198 | Kr. 237,21 | Kr. 474,42 |
| 200 + | Kr. 205,635 | Kr. 411,27 |
*price indicative
- RS Stock No.:
- 202-5731
- Mfr. Part No.:
- NVBG040N120SC1
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-263 | |
| Series | NVB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 178W | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.7mm | |
| Length | 10.2mm | |
| Standards/Approvals | AEC-Q101 | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-263 | ||
Series NVB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Maximum Gate Source Voltage Vgs 25V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 178W | ||
Maximum Operating Temperature 150°C | ||
Height 15.7mm | ||
Length 10.2mm | ||
Standards/Approvals AEC-Q101 | ||
Width 4.7mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.
AEC Q101 qualified
Production part approval process Capable
100% avalanche tested
Low effective output capacitance
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