onsemi NVB Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin TO-263 NVBG040N120SC1

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Subtotal (1 pack of 2 units)*

Kr.418 89 

(exc. VAT)

Kr.523 612 

(inc. VAT)

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Per Pack*
2 - 18Kr. 209,445Kr. 418,89
20 - 198Kr. 180,54Kr. 361,08
200 +Kr. 156,455Kr. 312,91

*price indicative

Packaging Options:
RS Stock No.:
202-5731
Mfr. Part No.:
NVBG040N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-263

Series

NVB

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

56mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

106nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

178W

Maximum Operating Temperature

150°C

Height

15.7mm

Length

10.2mm

Standards/Approvals

AEC-Q101

Width

4.7 mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified

Production part approval process Capable

100% avalanche tested

Low effective output capacitance

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