STMicroelectronics M6 Type N-Channel MOSFET, 12 A, 600 V, 3-Pin TO-252
- RS Stock No.:
- 203-3431P
- Mfr. Part No.:
- STD16N60M6
- Brand:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 203-3431P
- Mfr. Part No.:
- STD16N60M6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | M6 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 320mΩ | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16.7nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 2.4 mm | |
| Length | 6.6mm | |
| Height | 10.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series M6 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 320mΩ | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16.7nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 2.4 mm | ||
Length 6.6mm | ||
Height 10.1mm | ||
Automotive Standard No | ||
The STMicroelectronics N-channel MDmesh M6 Power MOSFET incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. Previous generation of MDmesh devices through its new M6 technology, is built by STMicroelectronics. This combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Low gate input resistance
100% avalanche tested
Zener-protected