Vishay SiR626ADP Type N-Channel MOSFET, 165 A, 60 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

Kr.31 731 00 

(exc. VAT)

Kr.39 663 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 10,577Kr. 31 731,00

*price indicative

RS Stock No.:
204-7199
Mfr. Part No.:
SiR626ADP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

165A

Maximum Drain Source Voltage Vds

60V

Series

SiR626ADP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.75mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

83nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Height

6.25mm

Standards/Approvals

No

Length

5.26mm

Width

1.12 mm

Automotive Standard

No

The Vishay N-Channel 60 V (D-S) MOSFET is tuned for the lowest RDS - Qoss FOM.

Package Power PAK SO-8

TrenchFET Gen IV power MOSFET

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